熊谷　義直

Professional Career

経歴

1996年4月 - 1999年3月 : 株式会社テキサス・インスツルメンツ 筑波研究開発センター 電子材料研究室 研究員
1999年4月 - 2001年7月 : 東京農工大学　工学部 応用分子化学科　助手
2001年8月 - 2004年3月 : 東京農工大学　工学部 応用分子化学科　講師
2004年4月 - 2013年11月 : 東京農工大学　大学院工学研究院　応用化学部門　准教授
2013年12月 - 現在 : 東京農工大学　大学院工学研究院　応用化学部門　教授

Academic Degrees

学位

1996年　博士（工学）筑波大学

Research Interests

キーワード

結晶成長、気相成長、エピタキシー、窒化物半導体、酸化物半導体

Publications

論文

• Kumagai, Y., Goto, K., Nagashima, T., Yamamoto, R., Boćkowski, M., Kotani, J., Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy. Applied Physics Express (Appl. Phys. Express) 15: 115501 1-4, 2022

• Nakahata, H., Togashi, R., Goto, K., Monemar, B., Kumagai, Y., Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0001) substrates, Journal of Crystal Growth (J. Cryst. Growth)., 563: 126111 1-6, 2021
• Wong, M. H., Murakami, H., Kumagai, Y., Higashiwaki, M., Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs, Applied Physics Letters (Appl. Phys. Lett.)., 118: 012102 1-6, 2021
• Mishra, A., Moule, T., Uren, M. J., Wong, M. H., Goto, K., Murakami, H., Kumagai, Y., Higashiwaki, M., Kuball, M. Characterization of trap states in buried nitrogen-implanted β-Ga2O3. Applied Physics Letters (Appl. Phys. Lett.)., 117: 243505 1-7, 2020
• Goto, K., Takekawa, N., Nagashima, T., Yamamoto, R., Pozina, G., Dalmau, R., Schlesser, R., Collazo, R., Monemar, B., Sitar, Z., Boćkowski, M., Kumagai, Y. Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers. Physica Status Solidi (a) (Phys. Stat. Sol. (a))., 217: 2000465 1-7, 2020
• Son, N. T., Ho, Q. D., Goto, K., Abe, H., Ohshima, T., Monemar, B., Kumagai, Y., Frauenheim, T., Deák, P. Electron paramagnetic resonance and theoretical study of gallium vacancy in β-Ga2O3. Applied Physics Letters (Appl. Phys. Lett.)., 117: 032101 1-5, 2020
• Yamamoto, R., Takekawa, N., Goto, K., Nagashima, T., Dalmau, R., Schlesser, R., Murakami, H., Collazo, R., Monemar, B., Zlatko Sitar, Kumagai, Y. Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas. Journal of Crystal Growth (J. Cryst. Growth)., 545: 125730 1-6, 2020
• Liu, Q., Fujimoto, N., Shen, J., Nitta, S., Tanaka, A., Honda, Y., Sitar, Z., Boćkowski, M., Kumagai, Y., Amano, H. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices. Journal of Crystal Growth (J. Cryst. Growth)., 539: 125643 1-6, 2020
• Korlacki, R., Mock, A., Briley, C., Darakchieva, V., Monemar, B., Kumagai, Y., Goto, K., Higashiwaki, M., Schubert, M. Comment on “Characteristics of Multi-photon Absorption in a β-Ga2O3 Single Crystal” [J. Phys. Soc. Jpn. 88, 113701 (2019)]. Journal of the Physical Society of Japan (J. Phys. Soc. Jpn.)., 89: 036001 1-2, 2020
• De Santi, C., Nardo, A., Wong, M.H., Goto, K., Kuramata, A., Yamakoshi, S., Murakami, H., Kumagai, Y., Higashiwaki, M., Meneghesso, G., Zanoni, E., Meneghini, M. Stability and degradation of isolation and surface in Ga2O3 devices. Microelectronics Reliability (Microelectron. Rel.). 100-101: 113453 1-4, 2019
• Yoshida, K., Yamanobe, S., Konishi, K., Takashima, S., Edo, M., Monemar, B., Kumagai, Y. Dependence of thermal stability of GaN on substrate orientation and off-cut. Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.). 58.C
• Goto, K., Konishi, K., Murakami, H., Kumagai, Y., Monemar, B., Higashiwaki, M., Kuramata, A., Yamakoshi, S. Halide vapor phase epitaxy of Si doped beta-Ga2O3 and its electrical properties. Thin Solid Films (Thin Solid Films) 666: 182-184, 2018.
• Rounds, R., Sarkar, B., Klump, A., Hartmann, C., Nagashima, T., Kirste, R., Franke, A., Bickermann, M., Kumagai, Y., Sitar, Z., Collazo, R. Thermal conductivity of single-crystalline AlN. Applied Physics Express (Appl. Phys. Express). 11: 071001 1-3, 2018
• Konishi, K., Goto, K., Togashi, R., Murakami, H., Higashiwaki, M., Kuramata, A., Yamakoshi, S., Monemar, B., Kumagai, Y. Comparison of O-2 and H2O as oxygen source for homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy. Journal of Crystal Growth (J. Cryst. Growth). 492: 39-44, 2018
• Rounds, R., Sarkar, B., Alden, D., Guo, Q., Klump, A., Hartmann, C., Nagashima, T., Kirste, R., Franke, A., Bickermann, M., Kumagai, Y., Sitar, Z., Collazo, R. The influence of point defects on the thermal conductivity of AlN crystals. Journal of Applied Physics (J. Appl. Phys.). 123: 185107 1-7, 2018